sot-89 1. base 2. collector 3. emitter sot-89 plastic-encapsulate transistors transistor (npn) features z low saturation voltage z excellent h fe characteristics z complements the 2sa1797 maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =50a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =50a,i c =0 6 v collector cut-off current i cbo v cb =60v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a dc current gain h fe v ce =2v, i c =500ma 82 390 collector-emitter saturation voltage v ce(sat) i c =1a,i b =50ma 0.35 v transition frequency f t v ce =2v,i c =0.5a, f=100mhz 210 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz 25 pf classification of h fe rank p q r range 82C 180 120C 270 180 C 390 marking dkp dkq dkr symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 6 v i c collector current 2 a p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 z 2012- 0 willas electronic corp. 2SC4672
0.1 1 10 1 10 100 1000 0.1 1 0 100 200 300 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 0 25 50 75 100 125 150 0 100 200 300 400 500 600 0.1 1 0.0 0.1 0.2 0.3 0.4 0.5 01234 0.0 0.2 0.4 0.6 0.8 1.0 0.1 1 0.2 0.4 0.6 0.8 1.0 1.2 0.3 3 f=1mhz i e =0/i c =0 t a =25 20 v cb / v eb c ob / c ib c ob c ib capacitance c (pf) reverse voltage v (v) 0.3 0.3 0.3 common emitter v ce =2v 2 i c t a =25 t a =100 dc current gain h fe collector current i c (a) typical characterisitics v be i c common emitter v ce =2v 2 t a =100 t a =25 collector current i c (a) base-emmiter voltage v be (v) p c t a collector power dissipation p c (mw) ambient temperature t a ( ) h fe 2 =20 t a =100 t a =25 i c v cesat collector-emitter saturation voltage v cesat (v) collector current i c (a) 4.0ma 3.6ma 3.2ma 2.8ma 2.4ma 2.0ma 1.6ma 1.2ma static characteristic 0.8ma i b =0.4ma common emitter t a =25 collector current i c (a) collector-emitter voltage v ce (v) 0.3 2 =20 i c v besat t a =100 t a =25 base-emitter saturation voltage v besat (v) collector current i c (a) 2012- 0 willas electronic corp. sot-89 plastic-encapsulate transistors 2SC4672
outline drawing dimensions in inches and (millimeters) sot-89 rev.c .047(1.2) .031(0.8) .102(2.60) .091(2.30) .181(4.60) .173(4.39) .061ref (1.55)ref .023(0.58) .016(0.40) .060typ (1.50)typ .118typ (3.0)typ .197(0.52) .013(0.32) .017(0.44) .014(0.35) .063(1.60) .055(1.40) .154(3.91) .167(4.25) 2012- 0 willas electronic corp. sot-89 plastic-encapsulate transistors 2SC4672
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